
3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography
<a href="https://news.google.com/rss/articles/CBMiX0FVX3lxTE04VWtlQU04MURzdGEwNFJRRm1Xbzg3dUMzaXYxZkNnRExJczdNRDgyektyRGxIOVIxOE9qLWU1VFRSYzRyM09fSFpPZjNkWjJzRFByVHYtbTREeG9PakJR?oc=5" target="_blank">3D atomic-scale metrology of strain relaxation and roughness in Gate-All-Around transistors via electron ptychography</a>&nbsp;&nbsp;<font color="#6f6f6f">Nature</font>
